Epitaxial Lift-Off GaAs/AlGaAs Metal-Semiconductor-Metal Photodetectors with Back Passivation
Journal Article (Journal Article)
High-performance thin-film epitaxial lift-off (ELO) photodetectors have potential for integration with independently optimized integrated circuits and waveguides. In this paper, the dark current, responsivity, and frequency response of GaAs/AlGaAs metal-semiconductor-metal (MSM) photodetectors that remain on the growth substrate are compared to ELO detectors with and without back passivation. The passivated ELO detectors perform comparably to the on-wafer devices, while the unpassivated devices exhibit performance degradation. In addition to demonstrating the importance of back passivation, this paper presents the lowest ELO MSM dark current (5 nA at 5 V) for a 200-pm-diameter device published to date. © 1993 IEEE
Full Text
Duke Authors
Cited Authors
- Hargis, MC; Carnahan, RE; Brown, JS; Jokerst, NM
Published Date
- January 1, 1993
Published In
Volume / Issue
- 5 / 10
Start / End Page
- 1210 - 1212
Electronic International Standard Serial Number (EISSN)
- 1941-0174
International Standard Serial Number (ISSN)
- 1041-1135
Digital Object Identifier (DOI)
- 10.1109/68.248430
Citation Source
- Scopus