Epitaxial Lift-Off GaAs/AlGaAs Metal-Semiconductor-Metal Photodetectors with Back Passivation

Journal Article (Journal Article)

High-performance thin-film epitaxial lift-off (ELO) photodetectors have potential for integration with independently optimized integrated circuits and waveguides. In this paper, the dark current, responsivity, and frequency response of GaAs/AlGaAs metal-semiconductor-metal (MSM) photodetectors that remain on the growth substrate are compared to ELO detectors with and without back passivation. The passivated ELO detectors perform comparably to the on-wafer devices, while the unpassivated devices exhibit performance degradation. In addition to demonstrating the importance of back passivation, this paper presents the lowest ELO MSM dark current (5 nA at 5 V) for a 200-pm-diameter device published to date. © 1993 IEEE

Full Text

Duke Authors

Cited Authors

  • Hargis, MC; Carnahan, RE; Brown, JS; Jokerst, NM

Published Date

  • January 1, 1993

Published In

Volume / Issue

  • 5 / 10

Start / End Page

  • 1210 - 1212

Electronic International Standard Serial Number (EISSN)

  • 1941-0174

International Standard Serial Number (ISSN)

  • 1041-1135

Digital Object Identifier (DOI)

  • 10.1109/68.248430

Citation Source

  • Scopus