Hybrid integrated optoelectronics: thin film devices bonded to host substrates

Journal Article (Academic article)

During the past decade, optoelectronics researchers and users have come to the growing realization that the integration of optoelectronic devices with silicon circuits and other materials optimal for specific applications is necessary to increase the utilization of optoelectronic devices, and in particular, compound semiconductor devices. Thin film integration, or bonding thin film epitaxial compound semiconductor devices (with the substrate removed) to host substrates has resulted in some optoelectronic integrated circuits with an unprecedented level of circuit complexity (thanks largely to the silicon circuits). The next challenge is to move toward systems, where the designer can now combine the cost and performance advantages of compound semiconductor devices with silicon for circuitry, and, if necessary, add glass, lithium niobate and polymers for options such as waveguides and switches. Even integration with micromachines has been demonstrated, and the tantalizing prospect of 3D stacked silicon integrated circuits with massively parallel, through-wafer optical interconnects exists, which may have a significant impact upon silicon systems

Full Text

Duke Authors

Cited Authors

  • Jokerst, NM

Published Date

  • 1997

Published In

  • Int. J. High Speed Electron. Syst. (Singapore)

Volume / Issue

  • 8 / 2

Start / End Page

  • 325 - 356

Digital Object Identifier (DOI)

  • 10.1142/S0129156497000123