Integrated optoelectronics using thin film epitaxial liftoff materials and devices

Journal Article

The separation of single crystal thin film epitaxial compound semiconductor layers from a lattice matched growth substrate through selective etching, with subsequent bonding of the epitaxial thin film devices onto host substrates, is an emerging tool for multi-material, hybrid integration. Progress to date in this area, presented herein, includes advanced thin film devices, thin film material separation and device integration processing techniques, and thin film material and device integration with host substrates which include silicon circuitry, polymers, glass, and lithium niobate.

Duke Authors

Cited Authors

  • Jokerst, NM

Published Date

  • 1997

Published In

  • Journal of Nonlinear Optical Physics and Materials

Volume / Issue

  • 6 / 1

Start / End Page

  • 19 - 48