Direct current and high frequency performance of thin film InP-based tunneling hot electron transfer amplifiers

Journal Article

We report the dc and high frequency performance of thin-film InP-based tunneling hot electron transfer amplifiers bonded to a variety of host substrates. The high-frequency device performance is slightly degraded since the InP substrate removal and bonding process for these devices have not yet been optimized. This demonstration represents an important step toward the development of high-frequency, thin-film InP-based electronic devices integrated with conventional Si-based circuit elements. © 1997 American Institute of Physics.

Duke Authors

Cited Authors

  • Evers, N; Laskar, J; Jokerst, NM; Moise, TS; Kao, Y-C

Published Date

  • 1997

Published In

  • Applied Physics Letters

Volume / Issue

  • 70 / 18

Start / End Page

  • 2452 - 2454