High efficiency thin-film GaAs-based MSM photodetectors
To increase the sensitivity of high speed GaAs based metal-semiconductor-metal (MSM) photodetectors, thin film inverted MSMs (fingers on the bottom) have been fabricated and compared to bulk MSMs. The inverted MSMs exhibit a record 95% external quantum efficiency, a bandwidth of 5.9GHz, and <5nA dark current at 10V bias.
Vendier, O; Jokerst, NM; Leavitt, RP
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