High efficiency thin-film GaAs-based MSM photodetectors

Journal Article

To increase the sensitivity of high speed GaAs based metal-semiconductor-metal (MSM) photodetectors, thin film inverted MSMs (fingers on the bottom) have been fabricated and compared to bulk MSMs. The inverted MSMs exhibit a record 95% external quantum efficiency, a bandwidth of 5.9GHz, and <5nA dark current at 10V bias.

Duke Authors

Cited Authors

  • Vendier, O; Jokerst, NM; Leavitt, RP

Published Date

  • 1996

Published In

  • Electronics Letters

Volume / Issue

  • 32 / 4

Start / End Page

  • 394 - 395