High efficiency thin-film GaAs-based MSM photodetectors
Journal Article (Journal Article)
To increase the sensitivity of high speed GaAs based metal-semiconductor-metal (MSM) photodetectors, thin film inverted MSMs (fingers on the bottom) have been fabricated and compared to bulk MSMs. The inverted MSMs exhibit a record 95% external quantum efficiency, a bandwidth of 5.9GHz, and <5nA dark current at 10V bias.
Full Text
Duke Authors
Cited Authors
- Vendier, O; Jokerst, NM; Leavitt, RP
Published Date
- February 15, 1996
Published In
Volume / Issue
- 32 / 4
Start / End Page
- 394 - 395
International Standard Serial Number (ISSN)
- 0013-5194
Digital Object Identifier (DOI)
- 10.1049/el:19960231
Citation Source
- Scopus