Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

Journal Article (Journal Article)

Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector (QDIP) was studied. Temperatures in the range of 600-800°C for 60 s, typical of atomic interdiffusion were used. The devices exhibited large dark currents after rapid thermal annealing.

Full Text

Published version (via Digital Object Identifier)

Duke Authors

Stiff-Roberts, Adrienne

Cited Authors

Stewart, K; Buda, M; Wong-Leung, J; Fu, L; Jagadish, C; Stiff-Roberts, A; Bhattacharya, P

Published Date

October 15, 2003

Published In

Journal of Applied Physics

Volume / Issue

94 / 8

Start / End Page

5283 - 5289

International Standard Serial Number (ISSN)

0021-8979

Digital Object Identifier (DOI)

10.1063/1.1609634

Citation Source

Scopus