High responsivity AIAs/InAs/GaAs superlattice quantum dot infrared photodetector

Published

Journal Article

The characteristics of quantum dot infrared photodetectors (QDIPs) in which InAs self-organised quantum dots are embedded in an AlAs/GaAs superlattice matrix are reported. An extremely large peak responsivity, R p =2.5 A/W, is measured at T= 78K for Vvias = -1.5V A dark current density as low as 3.2 × 10-4 A/cm2 for Vbias= -2.0 V is also measured at T=300K.

Full Text

Duke Authors

Cited Authors

  • Chakrabarti, S; Stiff-Roberts, AD; Bhattacharya, P; Kennerly, SW

Published Date

  • February 5, 2004

Published In

Volume / Issue

  • 40 / 3

Start / End Page

  • 197 - 198

International Standard Serial Number (ISSN)

  • 0013-5194

Digital Object Identifier (DOI)

  • 10.1049/el:20040136

Citation Source

  • Scopus