Quantum dot infrared photodetector design based on double-barrier resonant tunnelling
A novel quantum dot infrared photodeteotor design, based on double-barrier resonant tunnelling, is proposed and demonstrated. Theoretical calculations predict significantly lower dark currents in this device, compared to conventional quantum dot photodetectors. This is borne out of experimental results.
Su, XH; Chakrabarti, S; Stiff-Roberts, AD; Singh, J; Bhattacharya, P
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