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High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity

Publication ,  Journal Article
Chakrabarti, S; Stiff-Roberts, AD; Bhattacharya, P; Gunapala, S; Bandara, S; Rafol, SB; Kennerly, SW
Published in: IEEE Photonics Technology Letters
May 1, 2004

We have optimized the growth of multiple (40-70) layers of self-organized InAs quantum dots separated by GaAs barrier layers in order to enhance the absorption of quantum-dot infrared photodetectors (QDIPs). In devices with 70 quantum-dot layers, at relatively large operating biases (≤ -1.0 V), the dark current density is as low as 10-5 A/cm2 and the peak responsivity ranges from ∼0.1 to 0.3 A/W for temperatures T = 150 K - 175 K. The peak detectivity corresponding to these low dark currents and high responsivities varies in the range 6 × 109 ≤ D* (cm · Hz1/2/W) ≤ 1011 for temperatures 100 ≤ T(K) ≤ 200. These performance characteristics represent the state-of-the-art for QDIPs and indicate that this device heterostructure is appropriate for incorporation into focal plane arrays.

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Published In

IEEE Photonics Technology Letters

DOI

ISSN

1041-1135

Publication Date

May 1, 2004

Volume

16

Issue

5

Start / End Page

1361 / 1363

Related Subject Headings

  • Optoelectronics & Photonics
  • 5102 Atomic, molecular and optical physics
  • 4006 Communications engineering
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics
 

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Chakrabarti, S., Stiff-Roberts, A. D., Bhattacharya, P., Gunapala, S., Bandara, S., Rafol, S. B., & Kennerly, S. W. (2004). High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity. IEEE Photonics Technology Letters, 16(5), 1361–1363. https://doi.org/10.1109/LPT.2004.825974
Chakrabarti, S., A. D. Stiff-Roberts, P. Bhattacharya, S. Gunapala, S. Bandara, S. B. Rafol, and S. W. Kennerly. “High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity.” IEEE Photonics Technology Letters 16, no. 5 (May 1, 2004): 1361–63. https://doi.org/10.1109/LPT.2004.825974.
Chakrabarti S, Stiff-Roberts AD, Bhattacharya P, Gunapala S, Bandara S, Rafol SB, et al. High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity. IEEE Photonics Technology Letters. 2004 May 1;16(5):1361–3.
Chakrabarti, S., et al. “High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity.” IEEE Photonics Technology Letters, vol. 16, no. 5, May 2004, pp. 1361–63. Scopus, doi:10.1109/LPT.2004.825974.
Chakrabarti S, Stiff-Roberts AD, Bhattacharya P, Gunapala S, Bandara S, Rafol SB, Kennerly SW. High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity. IEEE Photonics Technology Letters. 2004 May 1;16(5):1361–1363.

Published In

IEEE Photonics Technology Letters

DOI

ISSN

1041-1135

Publication Date

May 1, 2004

Volume

16

Issue

5

Start / End Page

1361 / 1363

Related Subject Headings

  • Optoelectronics & Photonics
  • 5102 Atomic, molecular and optical physics
  • 4006 Communications engineering
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics