High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity

Journal Article (Journal Article)

We have optimized the growth of multiple (40-70) layers of self-organized InAs quantum dots separated by GaAs barrier layers in order to enhance the absorption of quantum-dot infrared photodetectors (QDIPs). In devices with 70 quantum-dot layers, at relatively large operating biases (≤ -1.0 V), the dark current density is as low as 10-5 A/cm2 and the peak responsivity ranges from ∼0.1 to 0.3 A/W for temperatures T = 150 K - 175 K. The peak detectivity corresponding to these low dark currents and high responsivities varies in the range 6 × 109 ≤ D* (cm · Hz1/2/W) ≤ 1011 for temperatures 100 ≤ T(K) ≤ 200. These performance characteristics represent the state-of-the-art for QDIPs and indicate that this device heterostructure is appropriate for incorporation into focal plane arrays.

Full Text

Duke Authors

Cited Authors

  • Chakrabarti, S; Stiff-Roberts, AD; Bhattacharya, P; Gunapala, S; Bandara, S; Rafol, SB; Kennerly, SW

Published Date

  • May 1, 2004

Published In

Volume / Issue

  • 16 / 5

Start / End Page

  • 1361 - 1363

International Standard Serial Number (ISSN)

  • 1041-1135

Digital Object Identifier (DOI)

  • 10.1109/LPT.2004.825974

Citation Source

  • Scopus