Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector


Journal Article

The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs - GaAs vertical quantum-dot infrared photodetector with a single Al0.3Ga0.7As current-blocking barrier are described and discussed in detail. A specific detectivity 3 × 109 cmHz1/2/W is measured for a detector temperature of 100 K at a bias of 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrared photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array.

Full Text

Duke Authors

Cited Authors

  • Stiff, AD; Krishna, S; Bhattacharya, P; Kennerly, SW

Published Date

  • November 1, 2001

Published In

Volume / Issue

  • 37 / 11

Start / End Page

  • 1412 - 1419

International Standard Serial Number (ISSN)

  • 0018-9197

Digital Object Identifier (DOI)

  • 10.1109/3.958360

Citation Source

  • Scopus