Modeling the enhanced diffusion of implanted boron in silicon

A simulation model was developed to describe the anomalous transient enhanced diffusion of implanted boron in silicon characterized by profiles in which a secondary peak is formed near the amorphous/crystalline interface. In this model, the diffusion equation was obtained by assumining either a self-interstitial/boron atom exchange mechanism or an intrinsic point defect/boron atom pair formation and diffusion. The initial distribution of excess point defects was proposed based on a depth-dependent implantation damage distribution. The effective diffusivity of point defects and their initial distributions were adjusted during the simulation to obtained the best fit to the SIMS boron diffusion profiles.

Duke Authors

Cited Authors

  • Kim, Y; Tan, TY; Massoud, HZ; Fair, RB

Published Date

  • 1991

Published In

  • Proceedings - The Electrochemical Society

Volume / Issue

  • 91 / 4

Start / End Page

  • 304 - 320

Citation Source

  • SciVal