OXIDATION, IMPURITY DIFFUSION, AND DEFECT GROWTH IN SILICON - AN OVERVIEW.
As a result of a large body of literature on oxidation, impurity diffusion, and defect growth in silicon, a consistent picture has emerged of oxidation-enhanced diffusion (OED) and oxidation-induced stacking fault growth (OISF). It is believed that silicon self-interstitials can be generated at an oxidizing Si/SiO//2 interface as a result of an incomplete half-cell reaction involving silicon and oxygen. Those interstitials that do not participate in surface regrowth participate in raising the steady-state concentration of self-interstitials in the surface region. OED can be explained in terms of a partial interstitialcy mechanism involving the surface-generated self-interstitials. The growth of OISF will occur if the relative steady-state self-interstitial concentration around the fault exceeds the emitted concentration of interstitials from the fault line. It is shown that this model predicts that OISF growth is limited by the production rate of self-interstitials at the Si/SiO//2 interface.