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The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon

Publication ,  Journal Article
Subrahmanyan, R; Massoud, HZ; Fair, RB
Published in: Journal of Applied Physics
December 1, 1987

The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon has been studied. Experimental data at 1000, 1100, and 1150 °C were obtained using secondary ion mass spectrometry (SIMS). A previously proposed empirical model was used in analyzing the impurity profiles, and the parameters of this model were determined by matching the computer simulations of dopant diffusion with the SIMS profiles. The dependence of the model parameters on temperature and HCl concentration is discussed.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1987

Volume

61

Issue

10

Start / End Page

4804 / 4807

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Subrahmanyan, R., Massoud, H. Z., & Fair, R. B. (1987). The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon. Journal of Applied Physics, 61(10), 4804–4807. https://doi.org/10.1063/1.338342
Subrahmanyan, R., H. Z. Massoud, and R. B. Fair. “The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon.” Journal of Applied Physics 61, no. 10 (December 1, 1987): 4804–7. https://doi.org/10.1063/1.338342.
Subrahmanyan R, Massoud HZ, Fair RB. The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon. Journal of Applied Physics. 1987 Dec 1;61(10):4804–7.
Subrahmanyan, R., et al. “The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon.” Journal of Applied Physics, vol. 61, no. 10, Dec. 1987, pp. 4804–07. Scopus, doi:10.1063/1.338342.
Subrahmanyan R, Massoud HZ, Fair RB. The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon. Journal of Applied Physics. 1987 Dec 1;61(10):4804–4807.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1987

Volume

61

Issue

10

Start / End Page

4804 / 4807

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences