The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon
Journal Article (Journal Article)
The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon has been studied. Experimental data at 1000, 1100, and 1150 °C were obtained using secondary ion mass spectrometry (SIMS). A previously proposed empirical model was used in analyzing the impurity profiles, and the parameters of this model were determined by matching the computer simulations of dopant diffusion with the SIMS profiles. The dependence of the model parameters on temperature and HCl concentration is discussed.
Full Text
Duke Authors
Cited Authors
- Subrahmanyan, R; Massoud, HZ; Fair, RB
Published Date
- December 1, 1987
Published In
Volume / Issue
- 61 / 10
Start / End Page
- 4804 - 4807
International Standard Serial Number (ISSN)
- 0021-8979
Digital Object Identifier (DOI)
- 10.1063/1.338342
Citation Source
- Scopus