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Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon

Publication ,  Journal Article
Subrahmanyan, R; Massoud, HZ; Fair, RB
Published in: Journal of the Electrochemical Society
January 1, 1990

The two-dimensional diffusion of phosphorus has been studied by comparing profiles measured experimentally after furnace and rapid thermal annealing with simulated profiles obtained with the two-dimensional simulators SUPREM IV and PREDICT 2. It was first shown experimentally that the effect of stress due to the window edge on chemical staining used in the measurement process is not significant to within the experimental error. It was then observed that there is considerable disagreement between measured and simulated profiles in the lateral direction, especially in the region directly under the mask edge. Possible explanations for the differences are discussed in terms of the inaccuracy of the initial implant simulation, the absence of damage annealing modeling in the simulation, and the effect of stress in the window edge vicinity on diffusion. When vacancy generation resulting from the reaction of the oxide with the underlying silicon substrate was included in the simulations, better agreement was observed with the experimental profiles. © 1990, The Electrochemical Society, Inc. All rights reserved.

Duke Scholars

Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1990

Volume

137

Issue

5

Start / End Page

1573 / 1579

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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Subrahmanyan, R., Massoud, H. Z., & Fair, R. B. (1990). Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon. Journal of the Electrochemical Society, 137(5), 1573–1579. https://doi.org/10.1149/1.2086729
Subrahmanyan, R., H. Z. Massoud, and R. B. Fair. “Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon.” Journal of the Electrochemical Society 137, no. 5 (January 1, 1990): 1573–79. https://doi.org/10.1149/1.2086729.
Subrahmanyan R, Massoud HZ, Fair RB. Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon. Journal of the Electrochemical Society. 1990 Jan 1;137(5):1573–9.
Subrahmanyan, R., et al. “Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon.” Journal of the Electrochemical Society, vol. 137, no. 5, Jan. 1990, pp. 1573–79. Scopus, doi:10.1149/1.2086729.
Subrahmanyan R, Massoud HZ, Fair RB. Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon. Journal of the Electrochemical Society. 1990 Jan 1;137(5):1573–1579.

Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1990

Volume

137

Issue

5

Start / End Page

1573 / 1579

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry