Point defect generation during phosphorus diffusion in silicon. II. Concentrations below solid solubility, ion-implanted phosphorus
For pt. I. see ibid., vol.134, p.1508 (1987). Defect generation during phosphorus diffusion at concentration levels below solid solubility was investigated from ion-implanted samples. Diffusions were performed in low oxygen ambient and in nitrogen with a silicon nitride cap. Arsenic and antimony buried layer markers were used to study the point defect generation effect on the diffusions. Defects were revealed using the Schimmel etch. The results showed that (i) stacking faults were formed below the phosphorus-diffused region in a low oxygen ambient and in the temperature range of 1050°-1150°C, (ii) enhancement of As and retardation of Sb were observed for long diffusion times, (iii) diffusion in nitrogen with a silicon nitride cap showed few stacking faults and neither enhancement of As nor retardation of Sb for the same temperature and time as (ii), and (iv) at phosphorus concentrations above solid solubility, diffusion in N2 with nitride film cap showed enhancement of As, and stacking faults were also observed
