Correction of calculated vacancy diffusion length at 1000°C in silicon
In attempting to calculate the anomalous transistor profiles published by Ziegler, Cole, and Baglin, it was necessary to assume the shape of the initial B profile. A complementary error function distribution was used, based upon their published junction depth and sheet resistance measurements. However, subsequent measurements of the initial B profile (unpublished results provided by Ziegler) showed that it did not have a complementary error function shape. In this paper, the calculations are repeated using the corrected initial B profile. © 1973 American Institute of Physics.
Volume / Issue
Start / End Page
International Standard Serial Number (ISSN)
Digital Object Identifier (DOI)