Correction of calculated vacancy diffusion length at 1000°C in silicon

Journal Article (Journal Article)

In attempting to calculate the anomalous transistor profiles published by Ziegler, Cole, and Baglin, it was necessary to assume the shape of the initial B profile. A complementary error function distribution was used, based upon their published junction depth and sheet resistance measurements. However, subsequent measurements of the initial B profile (unpublished results provided by Ziegler) showed that it did not have a complementary error function shape. In this paper, the calculations are repeated using the corrected initial B profile. © 1973 American Institute of Physics.

Full Text

Duke Authors

Published Date

  • December 1, 1973

Published In

Volume / Issue

  • 44 / 8

Start / End Page

  • 3794 - 3795

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.1662847

Citation Source

  • Scopus