Correction of calculated vacancy diffusion length at 1000°C in silicon
Journal Article (Journal Article)
In attempting to calculate the anomalous transistor profiles published by Ziegler, Cole, and Baglin, it was necessary to assume the shape of the initial B profile. A complementary error function distribution was used, based upon their published junction depth and sheet resistance measurements. However, subsequent measurements of the initial B profile (unpublished results provided by Ziegler) showed that it did not have a complementary error function shape. In this paper, the calculations are repeated using the corrected initial B profile. © 1973 American Institute of Physics.
Full Text
Duke Authors
Published Date
- December 1, 1973
Published In
Volume / Issue
- 44 / 8
Start / End Page
- 3794 - 3795
International Standard Serial Number (ISSN)
- 0021-8979
Digital Object Identifier (DOI)
- 10.1063/1.1662847
Citation Source
- Scopus