Damage Removal/Dopant Diffusion Tradeoffs in Ultra-Shallow Implanted p+-n Junctions

Journal Article (Journal Article)

The tradeoffs between implant damage annealing and shallow junction formation are investigated. For very-low-energy amorphizing implants the time for damage anneal has a fourth-power dependence on depth below the Si surface. The depth effect depends on the type of amorphizing ion. It is shown that as a result, implanted B in Ge-preamorphized Si diffuses with no detectable self-interstitial supersaturation if the damage is <600 Å deep. Conditions for forming defect-free, shallow p+-n junctions are described in design curves and comparisons are made between several junction-formation approaches. Implantation of B at energies below 2 keV offers an attractive way of achieving 500-Å junctions. © 1990 IEEE

Full Text

Duke Authors

Cited Authors

  • Fair, RB

Published Date

  • January 1, 1990

Published In

Volume / Issue

  • 37 / 10

Start / End Page

  • 2237 - 2242

Electronic International Standard Serial Number (EISSN)

  • 1557-9646

International Standard Serial Number (ISSN)

  • 0018-9383

Digital Object Identifier (DOI)

  • 10.1109/16.59914

Citation Source

  • Scopus