The diffusion of antimony in heavily doped and n- and p-type silicon

Published

Journal Article

The diffusion of Sb in heavily doped n- and p-type Si has been studied to determine the activation energies and charge states of the point defects responsible for Sb diffusion. It is shown that neutral point defects, probably Vx, dominate under intrinsic doping conditions. For samples doped with high-concentration As or P backgrounds, Sb diffusion is dominated by a double-negatively charge point defect that causes an n2concentration-dependent Sb diffusivity. Electric-field effects also are important. The measured diffusion coefficients are [formula omitted], and [formula omitted]. The activation energies are consistent with diffusion via Vxand V−vacancies. Retarded diffusion of Sb in p+-doped samples with uniform B profiles fits an ion pairing model where Sb ' B pairs form to reduce the flux of Sb atoms. © 1986, Materials Research Society. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Fair, RB; Manda, ML; Wortman, JJ

Published Date

  • January 1, 1986

Published In

Volume / Issue

  • 1 / 5

Start / End Page

  • 705 - 711

Electronic International Standard Serial Number (EISSN)

  • 2044-5326

International Standard Serial Number (ISSN)

  • 0884-2914

Digital Object Identifier (DOI)

  • 10.1557/JMR.1986.0705

Citation Source

  • Scopus