The gettering of boron by an ion-implanted antimony layer in silicon


Journal Article

Secondary ion mass spectrometry has been employed to reveal the gettering of implanted B by an annealed, implanted Sb layer. It is shown that the gettering of B is significant, and may be caused by electric-field-enhanced diffusion of the B as well as by solubility enhancement of the electrically-active Sb. These results emphasize the first-order importance of cooperative effects between donors and acceptors in diffusion profile calculations. © 1975.

Full Text

Duke Authors

Cited Authors

  • Fair, RB; Pappas, PN

Published Date

  • January 1, 1975

Published In

Volume / Issue

  • 18 / 12

Start / End Page

  • 1131 - 1134

International Standard Serial Number (ISSN)

  • 0038-1101

Digital Object Identifier (DOI)

  • 10.1016/0038-1101(75)90179-3

Citation Source

  • Scopus