The role of transient damage annealing in shallow junction formation
Published
Journal Article
Damage introduced into the Si substrate by ion-implantation can have a profound effect on the diffusion of dopants during rapid thermal annealing (RTA) or low temperature furnace annealing. In this paper defect production models are discussed for three cases: 1) low dose B+ implants, 2) B+ implants into preamorphized Si, and 3) BF2+, As+ and P+ self-amorphizing implants. Enhanced diffusion transients of dopants are related to the annealing of point-defect clusters, end-of-range dislocations and projected range misfit dislocations. Diffusion activation energies are reduced by the formation enthalpies of point defects generated by the annealing of implantation-induced damage. © 1989.
Full Text
Duke Authors
Cited Authors
- Fair, RB
Published Date
- February 2, 1989
Published In
Volume / Issue
- 37-38 / C
Start / End Page
- 371 - 378
International Standard Serial Number (ISSN)
- 0168-583X
Digital Object Identifier (DOI)
- 10.1016/0168-583X(89)90206-1
Citation Source
- Scopus