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Relationship between resistivity and total arsenic concentration in heavily doped n - And p -type silicon

Publication ,  Journal Article
Fair, RB; Weber, GR
Published in: Journal of Applied Physics
December 1, 1973

It has been observed that considerable discrepancy occurs between total As in Si diffusion profiles obtained by Irvin's curve and those determined by neutron-activation analysis. This discripancy can be explained in terms of the formation of inactive [VSiAs2] complexes. Under conditions of equilibrium between As+ ions and [VSiAs2] complexes, it is possible to derive the relation-relationship between total As, CT, and bulk resistivity, ρ, by using Irvin's curve as a standard. It is shown that a single CT-vs-ρ curve is not sufficient because of the temperature and initial Si substrate dopant dependence of [VSiAs2] complex formation. Equilibrated near-Si-surface As data obtained by activation analysis and resistivity measurements are presented to verify the theory. Excellent agreement is obtained. The important result of this study is that it is now possible to determine partially the As CT(x) diffusion profile from four-point probe measurements and anodic sectioning of the Si. While this technique can only be used over approximately the first 50% of the diffused layer, the rest of the CT(x) profile can be estimated from the electrically active As profile, CA(x) (determined by Irvin's curve) and an equation relating CT(x) to CA(x). © 1973 American Institute of Physics.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1973

Volume

44

Issue

1

Start / End Page

280 / 282

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Fair, R. B., & Weber, G. R. (1973). Relationship between resistivity and total arsenic concentration in heavily doped n - And p -type silicon. Journal of Applied Physics, 44(1), 280–282. https://doi.org/10.1063/1.1661874
Fair, R. B., and G. R. Weber. “Relationship between resistivity and total arsenic concentration in heavily doped n - And p -type silicon.” Journal of Applied Physics 44, no. 1 (December 1, 1973): 280–82. https://doi.org/10.1063/1.1661874.
Fair RB, Weber GR. Relationship between resistivity and total arsenic concentration in heavily doped n - And p -type silicon. Journal of Applied Physics. 1973 Dec 1;44(1):280–2.
Fair, R. B., and G. R. Weber. “Relationship between resistivity and total arsenic concentration in heavily doped n - And p -type silicon.” Journal of Applied Physics, vol. 44, no. 1, Dec. 1973, pp. 280–82. Scopus, doi:10.1063/1.1661874.
Fair RB, Weber GR. Relationship between resistivity and total arsenic concentration in heavily doped n - And p -type silicon. Journal of Applied Physics. 1973 Dec 1;44(1):280–282.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1973

Volume

44

Issue

1

Start / End Page

280 / 282

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences