Modeling boron diffusion in thin-oxide p+ Si gate technology


Journal Article

A network defect model suitable for use in process simulation is presented for the diffusion of B in SiO2 and, in particular, B in the presence of F and H2. We find that B diffuses via a peroxy linkage defect the concentration in the oxide of which changes under different processing conditions. From random walk theory it is possible then to calculate the resulting diffusion coefficients. These results are compared with measured diffusivities and empirical adjustments are made.

Full Text

Duke Authors

Cited Authors

  • Fair, RB; Gafiteanu, RA

Published Date

  • November 1, 1996

Published In

Volume / Issue

  • 17 / 11

Start / End Page

  • 497 - 499

International Standard Serial Number (ISSN)

  • 0741-3106

Digital Object Identifier (DOI)

  • 10.1109/55.541760

Citation Source

  • Scopus