Modeling boron diffusion in thin-oxide p+ Si gate technology
Publication
, Journal Article
Fair, RB; Gafiteanu, RA
Published in: IEEE Electron Device Letters
November 1, 1996
A network defect model suitable for use in process simulation is presented for the diffusion of B in SiO2 and, in particular, B in the presence of F and H2. We find that B diffuses via a peroxy linkage defect the concentration in the oxide of which changes under different processing conditions. From random walk theory it is possible then to calculate the resulting diffusion coefficients. These results are compared with measured diffusivities and empirical adjustments are made.
Duke Scholars
Published In
IEEE Electron Device Letters
DOI
ISSN
0741-3106
Publication Date
November 1, 1996
Volume
17
Issue
11
Start / End Page
497 / 499
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B., & Gafiteanu, R. A. (1996). Modeling boron diffusion in thin-oxide p+ Si gate technology. IEEE Electron Device Letters, 17(11), 497–499. https://doi.org/10.1109/55.541760
Fair, R. B., and R. A. Gafiteanu. “Modeling boron diffusion in thin-oxide p+ Si gate technology.” IEEE Electron Device Letters 17, no. 11 (November 1, 1996): 497–99. https://doi.org/10.1109/55.541760.
Fair RB, Gafiteanu RA. Modeling boron diffusion in thin-oxide p+ Si gate technology. IEEE Electron Device Letters. 1996 Nov 1;17(11):497–9.
Fair, R. B., and R. A. Gafiteanu. “Modeling boron diffusion in thin-oxide p+ Si gate technology.” IEEE Electron Device Letters, vol. 17, no. 11, Nov. 1996, pp. 497–99. Scopus, doi:10.1109/55.541760.
Fair RB, Gafiteanu RA. Modeling boron diffusion in thin-oxide p+ Si gate technology. IEEE Electron Device Letters. 1996 Nov 1;17(11):497–499.
Published In
IEEE Electron Device Letters
DOI
ISSN
0741-3106
Publication Date
November 1, 1996
Volume
17
Issue
11
Start / End Page
497 / 499
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering