EFFECT OF COMPLEX FORMATION ON DIFFUSION OF ARSENIC IN SILICON.
A model is proposed in which As** plus diffuses via a simple vacancy mechanism while in quasiequilibrium with left bracket V//S//iAs//2 right bracket complexes. The flux of mobile monatomic As** plus is modified according to the extent of left bracket V//S//iAs//2 right bracket complex formation. The structure of this defect and its formation energy are discussed. An effective diffusion coefficient is derived using this model. This analysis shows that the coefficient reaches a maximum value with increasing As concentration, and then decreases monotonically.