Subquarter-micrometre elevated source-and-drain MOSFET structure using polysilicon spacers

Published

Journal Article

Full Text

Duke Authors

Cited Authors

  • Mirabedini, MR; Fair, RB; Goodwin-Johansson, SH; Massoud, HZ

Published Date

  • September 15, 1994

Published In

Volume / Issue

  • 30 / 19

Start / End Page

  • 1631 - 1632

Published By

Electronic International Standard Serial Number (EISSN)

  • 1350-911X

International Standard Serial Number (ISSN)

  • 0013-5194

Digital Object Identifier (DOI)

  • 10.1049/el:19941068

Language

  • en