Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers

Published

Journal Article

A novel subquarter-micrometre MOSFET with a selfaligned source and drain, structure is proposed with elevated sources and drains formed by using polysilicon spacers. The spacers can reduce the effective channel length by 50% compared to the mask length, and reduce the junction capacitance by over 30% through a reduction in junction area, as shown by PISCES simulations. A graded oxide spacer is used to decrease the parasitic gate-to-drain capacitance. © 1994, IEE. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Mirabedini, RR; Goodwin-Johansson, SH; Massoud, HZ; Fair, RB

Published Date

  • January 1, 1994

Published In

Volume / Issue

  • 30 / 19

Start / End Page

  • 1631 - 1632

International Standard Serial Number (ISSN)

  • 0013-5194

Digital Object Identifier (DOI)

  • 10.1049/el:19941068

Citation Source

  • Scopus