Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining

Journal Article (Journal Article)

An experimental technique for the measurement of two-dimensional impurity diffusion profiles in silicon has been developed. Both the lateral and in-depth extent of dopant diffusion under a mask edge are magnified mechanically by sawing and angle lapping, and the magnified junction contour is delineated by chemical staining. The two-dimensional shape of the junction is reconstructed from the measured stained contour. A complete diffusion profile consisting of several isoconcentration contours can be obtained by measuring the junction shape on a series of samples with increasing substrate resistivities, provided the doping level in the substrate does not affect the diffusion of the impurity under study. Results of the two-dimensional diffusion of boron in silicon at 1050°C are presented.

Full Text

Duke Authors

Cited Authors

  • Subrahmanyan, R; Massoud, HZ; Fair, RB

Published Date

  • December 1, 1988

Published In

Volume / Issue

  • 52 / 25

Start / End Page

  • 2145 - 2147

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.99559

Citation Source

  • Scopus