Boron profile changes during low-temperature annealing of BF + 2-implanted silicon

Journal Article (Journal Article)

BF+2 ions were implanted in (100) silicon at room temperature with an energy of 40 keV through a 140-Å-thick SiO2 layer. Boron profiling by secondary-ion mass spectrometry indicates that subsequent annealing in a conventional furnace in the 650-850°C range for 30-240 min results in a pronounced secondary peak in the B and F profiles, in addition to the near-surface primary peak located in the vicinity of the projected range of the implanted species. This phenomenon was also observed in BF+2 -implanted samples which were rapid thermal annealed at 900°C for 15-60 s. The depths of the secondary peaks in the B and F profiles correspond to the depths of a damaged layer observed by cross-sectional transmission electron microscopy. Isochronal furnace annealing revealed that there is no chemical interaction between B and F atoms during annealing. This is also supported by the observation of F atoms not affecting the B segregation coefficient during oxidation of the BF+2 -implanted samples. The end-of-range extended dislocations appear to be responsible for the gettering of B and F atoms during annealing.

Full Text

Duke Authors

Cited Authors

  • Kim, Y; Massoud, HZ; Fair, RB

Published Date

  • December 1, 1988

Published In

Volume / Issue

  • 53 / 22

Start / End Page

  • 2197 - 2199

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.100505

Citation Source

  • Scopus