Effect of native SiO2 layer on the nucleation of diamond using a combustion flame
The effect of native oxide thickness on the nucleation of diamond was investigated. The initial thickness of the native oxide on Si substrates was varied using three surface treatment methods: ultrasonic scratching, HF acid etching, and a combination of the two. The oxide layer was also modified during the experiment by using a low O2:C2H2 ratio pregrowth treatment (Rf = 0.93, d = 15 mm). The use of HF acid eliminated the oxide layer within the detectable limits of the X-ray photoelectron spectroscopy analysis (about 3 A). A low gas ratio pregrowth treatment process (oxygen-to-acetylene ratio Rf, set to 0.93) meant that diamond crystals were formed after 30 s and a complete film in the center of the deposition area after 180 s. The low gas ratio pregrowth treatment suppressed the formation of the oxide layer relative to standard growth conditions (Rf = 0.97, d = 10 mm). However, it was determined that despite this low gas ratio treatment SiO2 formation was possible inside the acetylene feather. © 1994.
McClure, MT; von Windheim, JA; Glass, JT; Prater, JT
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