The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen

Journal Article (Journal Article)

The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples) and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly at T > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additional n-type defects in the bulk of the materials. © 1989 AIME.

Full Text

Duke Authors

Cited Authors

  • Ryu, J; Kim, HJ; Glass, JT; Davis, RF

Published Date

  • March 1, 1989

Published In

Volume / Issue

  • 18 / 2

Start / End Page

  • 157 - 165

Electronic International Standard Serial Number (EISSN)

  • 1543-186X

International Standard Serial Number (ISSN)

  • 0361-5235

Digital Object Identifier (DOI)

  • 10.1007/BF02657402

Citation Source

  • Scopus