The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen
The effects of annealing of B or N dual implanted regions in 15-20 Μm thick monocrystalline Β-SiC films has been investigated using cross-sectional TEM, SIMS, Raman spectroscopy, C-V and sheet resistance measurements. Implantation resulted in buried amorphous regions (in the B films) or highly disordered regions (in the N films) and residually strained regions. Annealing for 300 s at selected temperatures between 1173 and 2073 K caused structural reordering, precipitation (in the B samples) and dopant diffusion, as the temperature was progressively increased. Only slight changes were noted in the sheet resistance of either type of sample as a result of annealing to 1973 K. However, the values of this parameter decreased markedly at T > 1973 K in both implanted and as-grown samples. Thus, this phenomenon was most probably caused by the formation of additional n-type defects in the bulk of the materials. © 1989 AIME.
Ryu, J; Kim, HJ; Glass, JT; Davis, RF
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