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Oriented nucleation and growth of diamond films on β-SiC and Si

Publication ,  Journal Article
Kohl, R; Wild, C; Herres, N; Koidl, P; Stoner, BR; Glass, JT
Published in: Applied Physics Letters
December 1, 1993

Oriented diamond nuclei prepared by bias-enhanced microwave plasma chemical vapor deposition on β-SiC and Si were characterized by x-ray texture diffractometry. In both cases, x-ray pole figures reveal an epitaxial relation between the orientation of diamond nuclei and the substrate. However, the angular spread of the nuclei orientation is rather large, amounting to 9°-13°(FWHM) in both polar and azimuthal directions. When growing thick diamond films on top of these already oriented diamond nuclei, the evolution of the orientational order depends critically on the growth conditions. In the case of 〈100〉 oriented nuclei, growth conditions which favor the formation of a 〈100〉 fiber texture can even improve the degree of orientational order, whereas other growth conditions result in a deterioration of the epitaxial relationship.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

December 1, 1993

Volume

63

Issue

13

Start / End Page

1792 / 1794

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Kohl, R., Wild, C., Herres, N., Koidl, P., Stoner, B. R., & Glass, J. T. (1993). Oriented nucleation and growth of diamond films on β-SiC and Si. Applied Physics Letters, 63(13), 1792–1794. https://doi.org/10.1063/1.110664
Kohl, R., C. Wild, N. Herres, P. Koidl, B. R. Stoner, and J. T. Glass. “Oriented nucleation and growth of diamond films on β-SiC and Si.” Applied Physics Letters 63, no. 13 (December 1, 1993): 1792–94. https://doi.org/10.1063/1.110664.
Kohl R, Wild C, Herres N, Koidl P, Stoner BR, Glass JT. Oriented nucleation and growth of diamond films on β-SiC and Si. Applied Physics Letters. 1993 Dec 1;63(13):1792–4.
Kohl, R., et al. “Oriented nucleation and growth of diamond films on β-SiC and Si.” Applied Physics Letters, vol. 63, no. 13, Dec. 1993, pp. 1792–94. Scopus, doi:10.1063/1.110664.
Kohl R, Wild C, Herres N, Koidl P, Stoner BR, Glass JT. Oriented nucleation and growth of diamond films on β-SiC and Si. Applied Physics Letters. 1993 Dec 1;63(13):1792–1794.

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

December 1, 1993

Volume

63

Issue

13

Start / End Page

1792 / 1794

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences