Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates

High-quality, monocrystalline 6H-SiC thin films have been epitaxially grown on 6H-SiC {0001} substrates which were prepared 3°off-axis from 〈0001〉 towards 〈112̄0〉 at 1773 K via chemical vapor deposition (CVD). Essentially, no defects were generated from the epilayer/substrate interface as determined by cross-sectional transmission electron microscopy (XTEM). Double positioning boundaries which were observed in β-SiC grown on 6H-SiC substrates were eliminated as confirmed by plan-view TEM. A strong dependence of the surface morphology of the as-grown thin films on the tilting orientation of the substrates was observed and reasons for this phenomenon are discussed. The unintentionally doped 6H-SiC thin films always exhibit n-type conduction with a carrier concentration on the order of 10 16 cm-3. Au-6H-SiC Schottky barrier diodes were fabricated on the CVD 6H-SiC thin films and it was found that the leakage current at a reverse bias of 55 V was only 3.2×10-5 A/cm2. This is compared to SiC films grown on other substrates.

Full Text

Duke Authors

Cited Authors

  • Kong, HS; Glass, JT; Davis, RF

Published Date

  • 1988

Published In

Volume / Issue

  • 64 / 5

Start / End Page

  • 2672 - 2679

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.341608

Citation Source

  • SciVal