Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films

Journal Article (Academic article)

Summary form only given. The authors discuss growth of epitaxial films of β-SiC on high resistivity substrates, using chemical vapour deposition. They study the defects and effects of doping, and manufacture Schottky diodes

Full Text

Duke Authors

Cited Authors

  • Kim, HJ; Kong, H; Edmond, JA; Ryu, J; Palmour, J; Jr, CCH; Glass, JT; Davis, RF

Published Date

  • 1988

Published In

  • J. Vac. Sci. Technol. A, Vac. Surf. Films (Usa)

Volume / Issue

  • 6 / 3

Start / End Page

  • 1954 - 1956

Digital Object Identifier (DOI)

  • 10.1116/1.575214

Conference Location

  • Anaheim, CA, USA