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Geometric modeling of the diamond-β-SiC heteroepitaxial interface

Publication ,  Journal Article
Zhu, W; Wang, XH; Stoner, BR; Kong, HS; Braun, MWH; Glass, JT
Published in: Diamond and Related Materials
1993

A theoretical study of the diamond-β-SiC heteroepitaxial interface has been conducted. The interfacial modeling was performed to examine the various combinations of like and unlike interfacial planes between diamond and β-SiC based on a geometric criterion formulated in reciprocal space for minimization of interfacial misfit and strain energies. The modeling results indicated that the low index, unlike pair between diamond {114} and β-SiC{221} has the greatest potential for minimizing the interfacial energy and, therefore, is strongly recommended for experimental investigations. The low index, like pairs between diamond and β-SiC are next in potential, and diamond {100}-β-SiC{100} heteroepitaxy has been confirmed experimentally. Other configurations yield high interfacial energies and are unlikely to occur in reality. The relatively high strain energy associated with the like pair heteroepitaxy can be relieved by the introduction of misfit dislocations at the interface. The calculated misfit dislocation densities agree well with the experimental measurements.

Duke Scholars

Published In

Diamond and Related Materials

DOI

Publication Date

1993

Volume

2

Issue

2-4 pt 1

Start / End Page

590 / 596

Location

Heidelberg, Ger

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4018 Nanotechnology
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0910 Manufacturing Engineering
  • 0904 Chemical Engineering
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Zhu, W., Wang, X. H., Stoner, B. R., Kong, H. S., Braun, M. W. H., & Glass, J. T. (1993). Geometric modeling of the diamond-β-SiC heteroepitaxial interface. Diamond and Related Materials, 2(2–4 pt 1), 590–596. https://doi.org/10.1016/0925-9635(93)90127-N
Zhu, W., X. H. Wang, B. R. Stoner, H. S. Kong, M. W. H. Braun, and J. T. Glass. “Geometric modeling of the diamond-β-SiC heteroepitaxial interface.” Diamond and Related Materials 2, no. 2–4 pt 1 (1993): 590–96. https://doi.org/10.1016/0925-9635(93)90127-N.
Zhu W, Wang XH, Stoner BR, Kong HS, Braun MWH, Glass JT. Geometric modeling of the diamond-β-SiC heteroepitaxial interface. Diamond and Related Materials. 1993;2(2–4 pt 1):590–6.
Zhu, W., et al. “Geometric modeling of the diamond-β-SiC heteroepitaxial interface.” Diamond and Related Materials, vol. 2, no. 2–4 pt 1, 1993, pp. 590–96. Manual, doi:10.1016/0925-9635(93)90127-N.
Zhu W, Wang XH, Stoner BR, Kong HS, Braun MWH, Glass JT. Geometric modeling of the diamond-β-SiC heteroepitaxial interface. Diamond and Related Materials. 1993;2(2–4 pt 1):590–596.

Published In

Diamond and Related Materials

DOI

Publication Date

1993

Volume

2

Issue

2-4 pt 1

Start / End Page

590 / 596

Location

Heidelberg, Ger

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4018 Nanotechnology
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0910 Manufacturing Engineering
  • 0904 Chemical Engineering