Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures

Published

Journal Article

Thin carbon films grown from a low pressure methane-hydrogen gas mixture by microwave plasma enhanced CVD have been examined by Auger electron spectroscopy, secondary ion mass spectrometry, electron and x-ray diffraction, electron energy loss spectroscopy, and electron microscopy. They were determined to be similar to natural diamond in terms of composition, structure, and bonding. The surface morphology of the diamond films was a function of position on the sample surface and the methane concentration in the feedgas. Well-faceted diamond crystals were observed near the center of the sample whereas a less faceted, cauliflower texture was observed near the edge of the sample, presumably due to variations in temperature across the surface of the sample. Regarding methane concentration effects, threefold {111} faceted diamond crystals were predominant on a film grown at 0.3% CH4in H2while fourfold {100} facets were observed on films grown in 1.0% and 2.0% CH4in H2. Transmission electron microscopy of the diamond films has shown that the majority of diamond crystals have a very high defect density comprised of {111} twins, {111} stacking faults, and dislocations. In addition, cross-sectional TEM has revealed a 50 A epitaxial layer of β-SiC at the diamond-silicon interface of a film grown with 0.3% CH4in H2while no such layer was observed on a diamond film grown in 2.0% CH4in H2. © 1989, Materials Research Society. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Williams, BE; Glass, JT

Published Date

  • January 1, 1989

Published In

Volume / Issue

  • 4 / 2

Start / End Page

  • 373 - 384

Electronic International Standard Serial Number (EISSN)

  • 2044-5326

International Standard Serial Number (ISSN)

  • 0884-2914

Digital Object Identifier (DOI)

  • 10.1557/JMR.1989.0373

Citation Source

  • Scopus