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Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition

Publication ,  Journal Article
Stoner, BR; Ma, GH; Wolter, SD; Zhu, W; Wang, YC; Davis, RF; Glass, JT
Published in: Diamond and Related Materials
1993

Diamond has been successfully nucleated on mirror finish single-crystal β-SiC films via bias-enhanced microwave plasma chemical vapor deposition. Initial scanning electron microscopy indicated that approximately 50% of the diamond grains were oriented relative to the SiC substrate. Further, high resolution cross-sectional transmission electron microscopy (TEM) and electron diffraction confirmed that the diamond was in epitaxial alignment with the silicon carbide, with the D(100)//SiC(100) and D[Left angle bracket]110[Right Angle Bracket]//SiC[Left angle bracket]110[Right Angle Bracket]. The high resolution TEM also revealed an approximate 5° tilt about [Left angle bracket]110[Right Angle Bracket] towards [Left angle bracket]110[Right Angle Bracket]. This tilting is believed to be the result of the high density of misfit dislocations at the interface. Speculations on the role of biasing in the promotion of epitaxial diamond nucleation on a foreign substrate are also discussed.

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Published In

Diamond and Related Materials

DOI

Publication Date

1993

Volume

2

Issue

2-4 pt 1

Start / End Page

142 / 146

Location

Heidelberg, Ger

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4018 Nanotechnology
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0910 Manufacturing Engineering
  • 0904 Chemical Engineering
 

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Stoner, B. R., Ma, G. H., Wolter, S. D., Zhu, W., Wang, Y. C., Davis, R. F., & Glass, J. T. (1993). Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition. Diamond and Related Materials, 2(2–4 pt 1), 142–146. https://doi.org/10.1016/0925-9635(93)90045-4
Stoner, B. R., G. H. Ma, S. D. Wolter, W. Zhu, Y. C. Wang, R. F. Davis, and J. T. Glass. “Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition.” Diamond and Related Materials 2, no. 2–4 pt 1 (1993): 142–46. https://doi.org/10.1016/0925-9635(93)90045-4.
Stoner BR, Ma GH, Wolter SD, Zhu W, Wang YC, Davis RF, et al. Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition. Diamond and Related Materials. 1993;2(2–4 pt 1):142–6.
Stoner, B. R., et al. “Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition.” Diamond and Related Materials, vol. 2, no. 2–4 pt 1, 1993, pp. 142–46. Manual, doi:10.1016/0925-9635(93)90045-4.
Stoner BR, Ma GH, Wolter SD, Zhu W, Wang YC, Davis RF, Glass JT. Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition. Diamond and Related Materials. 1993;2(2–4 pt 1):142–146.

Published In

Diamond and Related Materials

DOI

Publication Date

1993

Volume

2

Issue

2-4 pt 1

Start / End Page

142 / 146

Location

Heidelberg, Ger

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4018 Nanotechnology
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0910 Manufacturing Engineering
  • 0904 Chemical Engineering