Electro-thermal resistance of GaAs interconnects

Published

Journal Article

This paper describes the effect of steady-state heating on the electrical and thermal resistance of interconnects on GaAs. Examined is a typical dual-layer metal interconnect system, common to GaAs processing. The interconnect system is considered in three parts, the interconnect metals, the Si3N4 dielectric surrounding the metal, and the Al xGa1-xAs epitaxial substrate. Using a meandering line as a test structure, measurements show how the direct current (DC) resistance increases with both temperature and dissipated power. Thermal resistors are proposed to account for self-heating and thermal coupling.

Full Text

Duke Authors

Cited Authors

  • Wartenberg, SA; Zhao, G; Liu, QH

Published Date

  • January 1, 2005

Published In

Volume / Issue

  • 34 / 3

Start / End Page

  • 294 - 298

International Standard Serial Number (ISSN)

  • 0361-5235

Digital Object Identifier (DOI)

  • 10.1007/s11664-005-0216-0

Citation Source

  • Scopus