Physical and electrical properties of chemical vapor grown GaN Nano/microstructures.
Journal Article (Journal Article)
Wurtzitic gallium nitride nano- and microleaves were controlled grown through a facile chemical vapor deposition method. This is the first report of GaN nanoleaves, a new morphology of GaN nanostructures. The as-grown GaN structures were characterized by means of X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray, transmission electron microscopy, and selected area electron diffraction. Raman scattering spectra of the GaN leaves were studied. Field effect transistors based on individual GaN nanoleaves were fabricated, and the electrical transport results revealed a pronounced n-type gating effect of the GaN nanostructures.
Full Text
Duke Authors
Cited Authors
- Li, J; Liu, J; Wang, L-S; Chang, RPH
Published Date
- November 2008
Published In
Volume / Issue
- 47 / 22
Start / End Page
- 10325 - 10329
PubMed ID
- 18928279
Pubmed Central ID
- 18928279
Electronic International Standard Serial Number (EISSN)
- 1520-510X
International Standard Serial Number (ISSN)
- 0020-1669
Digital Object Identifier (DOI)
- 10.1021/ic702427u
Language
- eng