Physical and electrical properties of chemical vapor grown GaN Nano/microstructures.

Published

Journal Article

Wurtzitic gallium nitride nano- and microleaves were controlled grown through a facile chemical vapor deposition method. This is the first report of GaN nanoleaves, a new morphology of GaN nanostructures. The as-grown GaN structures were characterized by means of X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray, transmission electron microscopy, and selected area electron diffraction. Raman scattering spectra of the GaN leaves were studied. Field effect transistors based on individual GaN nanoleaves were fabricated, and the electrical transport results revealed a pronounced n-type gating effect of the GaN nanostructures.

Full Text

Duke Authors

Cited Authors

  • Li, J; Liu, J; Wang, L-S; Chang, RPH

Published Date

  • November 2008

Published In

Volume / Issue

  • 47 / 22

Start / End Page

  • 10325 - 10329

PubMed ID

  • 18928279

Pubmed Central ID

  • 18928279

Electronic International Standard Serial Number (EISSN)

  • 1520-510X

International Standard Serial Number (ISSN)

  • 0020-1669

Digital Object Identifier (DOI)

  • 10.1021/ic702427u

Language

  • eng