{An enhanced analytical model is derived to calculate the junction depth and Hg interstitial profile during n-on-p junction formation in vacancy-doped HgCdTe. The enhanced model expands on a simpler model by accounting for the Hg interstitials in the p-type, vacancy-rich region. The model calculates junction depth during both the initial? reaction-limited regime of junction formation and the diffusion-limited regime. It also calculates junction depth under conditions when the abrupt junction approximation of the simpler model fails. The enhanced model can be used to determine the limits of the annealing conditions and times for which the junction depth calculated analytically is valid. The decay length of interstitials into the p-type region estimated analytically places an upper bound on the grid spacing needed to accurately resolve the junction in a numerical simulation. (C) 1998 American Institute of Physics. {[}S0021-8979(98)03403-3].}