Single-electron transistors made by chemical patterning of silicon dioxide substrates and selective deposition of gold nanoparticles


Journal Article

We describe a method to pattern SiO2 surfaces with colloidal gold nanoparticles by e -beam lithography and selective nanoparticle deposition. The simple technique allows us to deposit nanoparticles in continuous straight lines, just one nanoparticle wide and many nanoparticles long. We contact the prepositioned nanoparticles with metal leads to form single electron transistors. The Coulomb blockade pattern surprisingly does not show the parasitic "offset charges" at low temperatures, indicating relatively little surface contamination. © 2008 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Coskun, UC; Mebrahtu, H; Huang, PB; Huang, J; Sebba, D; Biasco, A; Makarovski, A; Lazarides, A; Labean, TH; Finkelstein, G

Published Date

  • October 6, 2008

Published In

Volume / Issue

  • 93 / 12

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.2981705

Citation Source

  • Scopus