Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes

The transition region width of nanowire heterojunctions and pn-junctions grown using vapor-liquid-solid (VLS) processes has been modeled. With two constituents or dopants I and II, the achievable width or abruptness of the junctions is attributed to the residual I atom/molecule stored in the liquid droplet at the onset of introducing II to grow the junction, and the stored I atom/molecule consumption into the subsequently grown crystal layers. The model yields satisfactory quantitative fits to a set of available Si-Ge junction data. Moreover, the model provides a satisfactory explanation to the relative junction width or abruptness differences between elemental and compound semiconductor junction cases, as well as a guideline for achieving the most desirable pn-junction widths. © 2008 Springer-Verlag.

Full Text

Duke Authors

Cited Authors

  • Li, N; Tan, TY; Gösele, U

Published Date

  • 2008

Published In

Volume / Issue

  • 90 / 4

Start / End Page

  • 591 - 596

International Standard Serial Number (ISSN)

  • 0947-8396

Digital Object Identifier (DOI)

  • 10.1007/s00339-007-4376-z

Citation Source

  • SciVal