Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

Journal Article (Academic article)

GaN is grown on Si-face 4H-SiC(001) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation. (c) 2006 Elsevier B.V. All rights reserved.

Duke Authors

Cited Authors

  • Bruno, G; Losurdo, M; Giangregorio, MM; Capezzuto, P; Brown, AS; Kim, TH; Choi, S

Published Date

  • October 2006

Published In

Volume / Issue

  • 253 / 1

Start / End Page

  • 219 - 223

International Standard Serial Number (ISSN)

  • 0169-4332