InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters


Journal Article

InAs heterojunction bipolar transistors (HBTs) are promising candidates for low power and high frequency (THz) device applications due to their small bandgap, high electron mobility, and high saturation drift velocity. However, doping limits such as the trade-off between desired low intentional n-type concentrations and unintentional doping, and the realization of high p-type concentrations, must still be considered in device design and synthesis. In order to observe the impact of intentional and unintentional n-type doping on diode electrical properties, InAs-based homojunction diodes have been grown on InAs substrates by solid-source molecular beam epitaxy (SSMBE) and were subsequently fabricated and characterized.

Full Text

Duke Authors

Cited Authors

  • Yi, C; Kim, TH; Brown, AS

Published Date

  • January 1, 2006

Published In

Volume / Issue

  • 35 / 9

Start / End Page

  • 1712 - 1714

International Standard Serial Number (ISSN)

  • 0361-5235

Digital Object Identifier (DOI)

  • 10.1007/s11664-006-0223-9

Citation Source

  • Scopus