Band discontinuity measurements of the wafer bonded InGaAsSi heterojunction

Journal Article

p -type InGaAsSi heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAsSi interface were determined to be 0.48 and -0.1 eV, respectively, indicating a type-II band alignment. © 2007 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • McKay, KS; Lu, FP; Kim, J; Yi, C; Brown, AS; Hawkins, AR

Published Date

  • 2007

Published In

Volume / Issue

  • 90 / 22

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.2745254