Skip to main content
Journal cover image

Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures

Publication ,  Journal Article
Triplett, GE; Brown, AS; May, GS
Published in: Journal of Crystal Growth
January 15, 2006

Indium-arsenide (InAs)-based devices are promising for next generation electronic and optoelectronic applications. Improving these devices requires greater control of the InAs quantum well properties, which in part, are related to the strain induced from the substrate material, buffer layer thickness, barrier composition, doping, and the heterointerface. This report focuses on the latter and includes X-ray diffraction and Hall results from a statistical experimental design (SED), which focused on the growth sequence at the heterointerface and growth throughout the channel, and illuminates correlations between structural variations and the electronic properties in strained InAs quantum well structures produced by molecular beam epitaxy (MBE). This data suggest that as more antimony from the sublayer is incorporated in the InAs layer, a product of anion exchange between antimony surface atoms and ensuing arsenic flux atoms, the strain states vary along with InAs channel mobility. © 2005 Elsevier B.V. All rights reserved.

Duke Scholars

Published In

Journal of Crystal Growth

DOI

ISSN

0022-0248

Publication Date

January 15, 2006

Volume

286

Issue

2

Start / End Page

345 / 349

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 3403 Macromolecular and materials chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Triplett, G. E., Brown, A. S., & May, G. S. (2006). Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures. Journal of Crystal Growth, 286(2), 345–349. https://doi.org/10.1016/j.jcrysgro.2005.10.098
Triplett, G. E., A. S. Brown, and G. S. May. “Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures.” Journal of Crystal Growth 286, no. 2 (January 15, 2006): 345–49. https://doi.org/10.1016/j.jcrysgro.2005.10.098.
Triplett GE, Brown AS, May GS. Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures. Journal of Crystal Growth. 2006 Jan 15;286(2):345–9.
Triplett, G. E., et al. “Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures.” Journal of Crystal Growth, vol. 286, no. 2, Jan. 2006, pp. 345–49. Scopus, doi:10.1016/j.jcrysgro.2005.10.098.
Triplett GE, Brown AS, May GS. Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures. Journal of Crystal Growth. 2006 Jan 15;286(2):345–349.
Journal cover image

Published In

Journal of Crystal Growth

DOI

ISSN

0022-0248

Publication Date

January 15, 2006

Volume

286

Issue

2

Start / End Page

345 / 349

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 3403 Macromolecular and materials chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry