Electrochemical micromachining: Porous-type anodization of patterned aluminum-copper films

Journal Article

Porous-type anodization of patterned ∼10 μm thick Al-Cu films results in microstructures with alternating regions of Al-Cu and porous Al2 O3. The volumetric expansion of porous Al2 O3 is minimized by increasing the anodization solution temperature. The fidelity of the mask transfer (10 μm wide) is compromised by the lateral pore propagation under the anodization mask. The Al-Cu pillars formed after complete dissolution of porous Al2 O3 have a trapezoidal shape. The height of pillars is twice (8 μm) the distance corresponding to the lateral pore propagation (4 μm). In contrast to wet chemical etching, porous-type anodization of patterned Al-Cu films is not isotropic. © 2006 The Electrochemical Society.

Full Text

Cited Authors

  • Brevnov, DA; Gamble, TC; Atanassov, P; López, GP; Bauer, TM; Chaudhury, ZA; Schwappach, CD; Mosley, LE

Published Date

  • 2006

Published In

Volume / Issue

  • 9 / 8

Start / End Page

  • B35 - B38

International Standard Serial Number (ISSN)

  • 1099-0062

Digital Object Identifier (DOI)

  • 10.1149/1.2206007