Phase-change technology and the future of main memory

Published

Journal Article

Phase-change memory may enable continued scaling of main memories, but PCM has higher access latencies, incurs higher power costs, and wears out more quickly than DRAM. This article discusses how to mitigate these limitations through buffer sizing, row caching, write reduction, and wear leveling, to make PCM a viable DRAM alternative for scalable main memories. © 2006 IEEE.

Full Text

Duke Authors

Cited Authors

  • Lee, BC; Zhou, P; Yang, J; Zhang, Y; Zhao, B; Ipek, E; Mutlu, O; Burger, D

Published Date

  • January 1, 2010

Published In

Volume / Issue

  • 30 / 1

Start / End Page

  • 131 - 141

International Standard Serial Number (ISSN)

  • 0272-1732

Digital Object Identifier (DOI)

  • 10.1109/MM.2010.24

Citation Source

  • Scopus