On the possibility of a shunt-stabilized superlattice THz emitter

Journal Article (Academic article)

High field electronic transport through a strongly-coupled superlattice (SL) with a shunting side layer is numerically studied using a novel drift-diffusion model. The bias voltage corresponds to an average electric field in the negative differential conductivity (NDC) region of the intrinsic current-field (I ¡ F) curve of the SL, a condition that generally implies space charge instability. Key structural parameters associated with both the shunt layer and SL are identified for which the shunt layer stabilizes a uniform electric field profile. These results support the possibility to realize a SL-based THz oscillator with a carefully designed structure.

Duke Authors

Cited Authors

  • Xu, H; Teitsworth, SW

Published Date

  • 2010

Published In

  • Applied Physics Letters

Volume / Issue

  • 96 / 022101

Start / End Page

  • 3 pages -