On the possibility of a shunt-stabilized superlattice THz emitter
High field electronic transport through a strongly-coupled superlattice (SL) with a shunting
side layer is numerically studied using a novel drift-diffusion model. The bias voltage corresponds
to an average electric field in the negative differential conductivity (NDC) region of the intrinsic
current-field (I ¡ F) curve of the SL, a condition that generally implies space charge instability.
Key structural parameters associated with both the shunt layer and SL are identified for which
the shunt layer stabilizes a uniform electric field profile. These results support the possibility to
realize a SL-based THz oscillator with a carefully designed structure.
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