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An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates

Publication ,  Journal Article
Kong, HS; Jiang, BL; Glass, JT; Rozgonyi, GA; More, KL
Published in: Journal of Applied Physics
December 1, 1988

Beta-SiC thin films epitaxially grown on 6H-SiC (0001) substrates were examined via scanning-reflection x-ray topography (XRT) and x-ray rocking curve analysis. The lattice misfit between the (111) plane of the β-SiC epitaxial layer and the (0001) plane of the 6H-SiC substrate was determined to be 7.6×10-4. Boundaries separating regions of the β-SiC film rotated from each other by 60°were observed and identified by XRT as double positioning boundaries (DPBs), which are a special type of twin boundary. The XRT maps showed that the mosaic structure examined via optical microscopy was also caused by the DPBs. Finally, many stacking faults were generated at the boundaries as revealed by plan-view transmission electron microscopy, indicating the high internal energy of these DPBs. The formation mechanisms of the DPBs is also discussed.

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Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1988

Volume

63

Issue

8

Start / End Page

2645 / 2650

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

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Kong, H. S., Jiang, B. L., Glass, J. T., Rozgonyi, G. A., & More, K. L. (1988). An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates. Journal of Applied Physics, 63(8), 2645–2650. https://doi.org/10.1063/1.341004
Kong, H. S., B. L. Jiang, J. T. Glass, G. A. Rozgonyi, and K. L. More. “An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates.” Journal of Applied Physics 63, no. 8 (December 1, 1988): 2645–50. https://doi.org/10.1063/1.341004.
Kong HS, Jiang BL, Glass JT, Rozgonyi GA, More KL. An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates. Journal of Applied Physics. 1988 Dec 1;63(8):2645–50.
Kong, H. S., et al. “An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates.” Journal of Applied Physics, vol. 63, no. 8, Dec. 1988, pp. 2645–50. Scopus, doi:10.1063/1.341004.
Kong HS, Jiang BL, Glass JT, Rozgonyi GA, More KL. An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates. Journal of Applied Physics. 1988 Dec 1;63(8):2645–2650.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1988

Volume

63

Issue

8

Start / End Page

2645 / 2650

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences