The formation of epitaxial hexagonal boron nitride on nickel substrates

Published

Journal Article

The various crystallographic forms of boron nitride (BN) are of great technological interest because of their demonstrated tribological, high-temperature, thermally conducting, electrically insulating, and wide-bandgap semiconductor properties. Unfortunately, the synthesis of crystalline BN films is still in the early stages of development. Furthermore, although polycrystalline BN films have been prepared by a variety of physical and chemical vapor deposition techniques, the capability does not currently exist for depositing large area single-crystal or oriented films of BN. Such single-crystal films are required for many applications of interest, especially in electronics. The present paper reports on a new approach to the oriented growth of boron nitride using a novel molten layer epitaxy technique. Well-oriented hexagonal boron nitride (h-BN) crystals were obtained with highly faceted crystal shapes. The h-BN was formed via precipitation from a molten, hydrogen-saturated Ni surface layer. Solid cubic BN was utilized as the source material and was dissolved into the substrate surface during a brief high-temperature anneal. It was found that surface melting occurred during this process and the B diffused into the Ni substrate, whereas the N was expelled into the growth chamber. Oriented BN was then precipitated as the surface layer was allowed to resolidify.

Full Text

Duke Authors

Cited Authors

  • Yang, PC; Prater, JT; Liu, W; Glass, JT; Davis, RF

Published Date

  • January 1, 2005

Published In

Volume / Issue

  • 34 / 12

Start / End Page

  • 1558 - 1564

International Standard Serial Number (ISSN)

  • 0361-5235

Digital Object Identifier (DOI)

  • 10.1007/s11664-005-0165-7

Citation Source

  • Scopus