Oriented diamond films grown on nickel substrates

A previously reported multistep hot filament chemical vapor deposition process for nucleating diamond directly on nickel substrates has been further refined to increase the nucleation density and improve the orientation of diamond films. The process employed heavy seeding of both 〈100〉 and 〈111〉 oriented single crystal Ni surfaces with diamond powders to enhance the nucleation density of diamond films. The deposition conditions were adjusted to allow for 〈100〉 and 〈111〉 orientations to grow on similarly oriented substrates to form nearly complete films with grain boundaries being eliminated. Thus, the technique holds promise for developing heteroepitaxial diamond films for microelectronics applications.

Full Text

Duke Authors

Cited Authors

  • Zhu, W; Yang, PC; Glass, JT

Published Date

  • 1993

Published In

Volume / Issue

  • 63 / 12

Start / End Page

  • 1640 - 1642

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.110721

Citation Source

  • SciVal