Large-area mosaic diamond films approaching single-crystal quality

The seeding for large-area mosaic diamond films approaching single-crystal quality is described. The technique includes patterned etching of relief structures in Si substrates, deposition from a slurry and orientation of macroscopic diamond seed crystals in the structures, and chemical vapor deposition overgrowth of the diamond seeds to form a continuous film. The film comprises ∼100 μm single crystals, which are separated by low-angle grain boundaries of a few degrees or less. We believe that these low-angle grain boundaries will not affect the electrical properties of majority-carrier devices.

Full Text

Duke Authors

Cited Authors

  • Geis, MW; Smith, HI; Argoitia, A; Angus, J; Ma, GHM; Glass, JT; Butler, J; Robinson, CJ; Pryor, R

Published Date

  • 1991

Published In

Volume / Issue

  • 58 / 22

Start / End Page

  • 2485 - 2487

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.104851

Citation Source

  • SciVal